Summary
- Cambridge GaN Devices and IFP Energies nouvelles developed a demonstration for CGD’s ICeGaN650 V gallium nitride integrated circuits
- The demo shows that ICeGaN technology enables easily parallel use of inverters with high power density
- The multi-level inverters can power electric motors to over 100 kW peak and 75 kW continuous power
- The ICeGaN multi-level design proposed by IFPEN enables increased efficiency, higher switching frequencies, reduced electromagnetic interference, enhanced thermal management and modular design
- IFPEN strongly believes that GaN is a breakthrough technology for high-voltage traction inverters
Article
UK-based fabless semiconductor company Cambridge GaN Devices (CGD) and French public research and training organization IFP Energies nouvelles (IFPEN) have collaborated to develop a demonstration showcasing the effectiveness of CGD’s ICeGaN650 V gallium nitride (GaN) integrated circuits (ICs) in a multi-level, 800 VDC inverter. This collaboration has resulted in a demo that delivers high power density of 30 kW/l, surpassing the capabilities of more expensive silicon-carbide (SiC)-based devices. The demo also demonstrates that ICeGaN technology allows inverters to be easily used in parallel, with each node featuring three 25 mΩ / 650 V ICeGaN ICs for a total of 36 devices in parallel.
The multi-level inverters developed in this collaboration have the capacity to power electric motors to over 100 kW peak and 75 kW continuous power. Featuring high voltage input of up to 800 VDC, three-phase output, peak current of 125 Arms (10s) (180 Apk) and continuous current of 85 Arms continuous (120 Apk), these inverters represent a significant advancement in power electronics technology. The ICeGaN multi-level design proposed by IFPEN offers benefits such as increased efficiency, higher switching frequencies, reduced electromagnetic interference, enhanced thermal management, and modular design, making them highly attractive for a range of applications.
The successful implementation of the inverter reference using CGD’s ICeGaN ICs and innovative topologies like multi-level solutions has led IFPEN to believe that GaN technology is a breakthrough in terms of both performance and cost for high-voltage traction inverters. Gaetano de Paola, Program Manager at IFPEN, highlights the potential of GaN technology for transforming the power electronics landscape, particularly for high-voltage applications. By leveraging CGD’s GaN ICs in combination with advanced design techniques, IFPEN has demonstrated the versatility and efficiency of GaN in power electronics.
Overall, the collaboration between CGD and IFPEN has resulted in the successful development of a high-performance inverter utilizing GaN technology. This demo showcases the potential of CGD’s ICeGaN650 V ICs in achieving high power density, surpassing traditional SiC-based devices. The demonstration highlights the advantages of using GaN technology, including increased efficiency, higher switching frequencies, reduced electromagnetic interference, enhanced thermal management, and modular design. By incorporating innovative design approaches like multi-level solutions, the demonstration reinforces the value of GaN as a transformative technology in power electronics.
The multi-level inverters developed in this collaboration have the capability to drive electric motors to over 100 kW peak power and 75 kW continuous power. The demo features a high-voltage input of up to 800 VDC, three-phase output, peak current of 125 Arms (10s) (180 Apk), and continuous current of 85 Arms continuous (120 Apk), demonstrating the robust performance of the GaN-based inverters. These advancements in power electronics represent a significant step forward in the industry, offering improved efficiency, reduced size, and enhanced performance compared to traditional silicon-based solutions.
In conclusion, the successful collaboration between CGD and IFPEN underscores the potential of GaN technology for revolutionizing power electronics applications. By leveraging CGD’s ICeGaN650 V gallium nitride integrated circuits in a multi-level inverter, the partners have demonstrated the superior performance and efficiency of GaN over traditional silicon-based solutions. This demonstration represents a significant milestone in the advancement of power electronics technology, offering increased power density and enhanced capabilities for a range of applications. With the continued development and adoption of GaN technology, the industry can expect to see further innovations and improvements in power electronics systems.
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