Summary
- Cambridge GaN Devices developed GaN technology combining ICeGaN HEMT ICs and IGBTs in the same module for EV powertrain applications
- ICeGaN and IGBT devices operate in parallel architecture with similar drive voltage ranges and gate robustness
- ICeGaN switch is efficient and cost-effective compared to SiC products with low conduction and switching losses
- Bipolar component of IGBT conducts at lower voltages at high temperatures, while ICeGaN takes more current at low temperatures
- ICeGaN technology allows GaN usage in DC-to-DC converters, onboard chargers, and potentially traction inverters.
Article
UK-based semiconductor company Cambridge GaN Devices (CGD) has developed a new GaN technology that combines ICeGaN HEMT integrated circuits (ICs) and Insulated-Gate Bipolar Transistors (IGBTs) in the same module for EV powertrain applications over 100 kW. The Combo ICeGaN approach takes advantage of the fact that ICeGaN and IGBT devices can be operated in a parallel architecture with similar drive voltage ranges and strong gate robustness.
The ICeGaN switch in the Combo ICeGaN is highly efficient and offers a cost-effective alternative to silicon carbide (SiC) products. It has low conduction and switching losses at light loads, while the IGBT is dominant at higher currents towards full load or surge conditions. The bipolar component of the IGBT starts to conduct at lower on-state voltages at higher temperatures, supplementing the loss of current in the ICeGaN. Conversely, at lower temperatures, ICeGaN will take more current.
Sensing and protection functions are integrated to optimally drive the Combo ICeGaN and enhance the Safe Operating Area (SOA) of both the ICeGaN and IGBT devices. ICeGaN technology allows EV engineers to incorporate GaN in various applications such as DC-to-DC converters, on-board chargers, and potentially traction inverters. CGD has also demonstrated similar parallel combinations of ICeGaN devices with SiC MOSFETs, but the Combo ICeGaN is more economical according to the company.
The company expects to have working demos of the Combo ICeGaN technology by the end of the year. Professor Florin Udrea, CGD’s founder and CTO, mentioned that ICeGaN is incredibly fast and performs well at light load conditions, while the IGBT provides benefits during full load, surge conditions, and high temperatures. ICeGaN provides on-chip intelligence, while the IGBT offers avalanche capability. Both devices use silicon substrates, providing cost, infrastructure, and manufacturability advantages.
In summary, CGD’s Combo ICeGaN technology combines ICeGaN and IGBT devices in a parallel architecture for EV powertrain applications over 100 kW. This approach offers a cost-effective alternative to SiC products, with ICeGaN being efficient at light loads and IGBT dominating at higher currents. The integration of sensing and protection functions optimally drives the Combo ICeGaN, enhancing the Safe Operating Area of both devices. CGD aims to showcase working demos of this technology by the end of the year.
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