Summary
- STMicroelectronics introducing fourth-generation STPOWER silicon carbide MOSFET product range
- Generation 4 technology offers more power efficiency, density, and robustness optimized for EV powertrains
- Company has completed qualification of 750V class and expects to qualify 1200V class by Q1 2025
- Generation 4 SiC MOSFETs feature lower on-resistance and faster switching speeds for efficiency
- Devices are compact with a smaller die size and designed for reliable operation in harsh conditions
Article
STMicroelectronics, a semiconductor technology firm based in Switzerland, is launching its fourth-generation STPOWER silicon carbide (SiC) MOSFET product range. This new technology is designed to offer enhanced power efficiency, power density, and robustness compared to previous generations, specifically optimized for traction inverters in electric vehicle (EV) powertrains. The company has completed qualification of the platform’s 750 V class and anticipates qualifying the 1200 V class in the first quarter of 2025. Commercial availability of devices with nominal voltage ratings of 750 V and 1200 V is expected to follow as the company increases volumes through 2025, suitable for applications ranging from standard AC-line voltages to high-voltage EV batteries and chargers.
The Generation 4 SiC MOSFETs boast a lower on-resistance (RDS(on)) compared to prior generations, reducing conduction losses and improving overall system efficiency. They also offer faster switching speeds, leading to lower switching losses, crucial for high-frequency applications and enabling more compact and efficient power converters. The average die size of Generation 4 devices is 12-15% smaller than that of Generation 3, considering an RDS(on) at 25 °C, allowing for more compact power converter designs that save space and reduce system costs. This technology aims to expand SiC adoption beyond premium EVs to mid-size and compact models, bringing the benefits of SiC to a broader range of applications.
Furthermore, the Generation 4 technology has been engineered to be robust in Dynamic Reverse Bias (DRB) conditions, surpassing the AQG324 automotive standard to ensure reliable operation in challenging environments. Future plans for STMicroelectronics include introducing additional SiC products through 2027, with the fifth generation of ST SiC power devices set to feature high-power density technology based on planar structure. The company is also developing devices with improved on-resistance RDS(on) values at high temperatures and further RDS(on) reduction compared to existing SiC technologies, showcasing a commitment to continuous innovation and advancement in SiC MOSFET technology.
According to Marco Cassis, President of Analog, Power & Discrete, MEMS, and Sensors Group at STMicroelectronics, the company is dedicated to advancing SiC MOSFET technology through innovations in the device itself, advanced packages, and power modules. This ongoing commitment to research and development is evident in the progress made with the Generation 4 SiC MOSFETs, which promise to deliver significant advantages in power efficiency, system compactness, and reliability. By leveraging cutting-edge technology and expertise, STMicroelectronics aims to drive the adoption of SiC technology across a wider range of applications, including mid-size and compact EV models, demonstrating a vision for the future of semiconductor technology and power management solutions.
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