Summary
- PANJIT International introduced a new series of automotive-grade 60 V N-channel MOSFETs with SGT technology
- The series is designed to enhance FOM, reduce RDS(ON) and capacitance, improving performance and energy efficiency in automotive electronics
- SGT MOSFETs feature increased trench depth and shielding electrode to reduce switching losses and improve breakdown voltage
- The MOSFETs are AEC-Q101 qualified and available in compact packages with an operating temperature of up to 175° C
- Automotive applications for the series include ADAS, BCUs, cooling fans, LED lighting, motor pumps, chargers, and sensors
Article
PANJIT International, a Taiwanese semiconductor company, has introduced a new series of automotive-grade 60 V N-channel MOSFETs that feature Shielded Gate Trench (SGT) technology. These MOSFETs are designed to support power devices for automobiles and enhance performance and energy efficiency in automotive electronic systems by reducing conduction and switching losses. The series is engineered to deliver enhanced figure of merit (FOM), ultra-low RDS(ON), and minimized capacitance.
The SGT MOSFETs in this series are medium-voltage MOSFETs that have an increased trench depth and charge-coupled structure, enabling horizontal and vertical depletion. This design enhances breakdown voltage and enables higher performance at similar doping concentrations compared to traditional trench MOSFETs. The addition of a shielding electrode under the gate electrode, connected to the source electrode, reduces Miller capacitance and lowers switching losses. The design also lowers the total gate charge by 57%.
PANJIT’s 60 V N-channel MOSFETs are AEC-Q101 qualified and available in various compact and efficient packages, including DFN3333-8L, DFN5060-8L, DFN5060B-8L, TO-252AA, and TO-220AB-L. These MOSFETs are designed to operate at junction temperatures up to 175°C, providing optimal design flexibility for modern automotive electronics. The series is suitable for a wide range of automotive applications, including advanced driver assistance systems (ADAS), body control unit (BCUs) cooling fans, infotainment and instrument displays, LED lighting, motor pumps, onboard chargers, and sensors.
Overall, PANJIT International’s latest series of automotive-grade 60 V N-channel MOSFETs with SGT technology offer enhanced performance and energy efficiency for automotive electronic systems. By incorporating features like deeper trench depth, charge-coupled structure, and shielding electrode, these MOSFETs reduce conduction and switching losses, leading to improved FOM, ultra-low RDS(ON), and minimized capacitance. The availability of various compact and efficient packages and the ability to operate at high junction temperatures make these MOSFETs suitable for a wide range of automotive applications, including ADAS, BCUs, LED lighting, and sensors.
The introduction of SGT technology in this series of MOSFETs marks a significant advancement in power device technology for automobiles. The innovative design enhances breakdown voltage, performance, and energy efficiency compared to traditional trench MOSFETs. By reducing Miller capacitance, switching losses, and total gate charge, these MOSFETs offer a more efficient and reliable solution for automotive electronic systems. With AEC-Q101 qualification and a range of package options, PANJIT’s MOSFETs provide design flexibility and reliability for modern automotive applications.
In conclusion, PANJIT International’s automotive-grade 60 V N-channel MOSFETs with Shielded Gate Trench (SGT) technology offer a high-performance and energy-efficient solution for automotive electronic systems. The incorporation of SGT technology enhances breakdown voltage, performance, and energy efficiency, while reducing conduction and switching losses. With a range of compact and efficient packages and the ability to operate at high junction temperatures, these MOSFETs are well-suited for a variety of automotive applications, including ADAS, BCUs, LED lighting, and sensors. Overall, PANJIT’s latest MOSFET series represents a significant advancement in power device technology for automobiles.
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