Summary
- ROHM Semiconductor has released GNP2070TD-Z 650 V GaN high-electron-mobility transistors (HEMTs) in the TO-Leadless (TOLL) package
- The TOLL package is compact with high heat dissipation, current capacity, and switching performance, making it ideal for industrial and automotive systems
- Package manufacturing for the HEMTs has been outsourced to ATX Semiconductor, a Chinese outsourced semiconductor assembly and test provider
- ROHM has developed automotive-grade GaN devices and plans to introduce more through partnerships
- The new products integrate GaN-on-Si chips in a TOLL package, promoting further miniaturization and energy efficiency in power systems.
Article
ROHM Semiconductor has recently introduced the GNP2070TD-Z 650 V GaN high-electron-mobility transistors (HEMTs) in the TO-Leadless (TOLL) package, designed with a compact form factor and high heat dissipation capabilities. These HEMTs are being utilized in applications that require high power handling, particularly in industrial equipment and automotive systems. The TOLL package offers superior current capacity and switching performance, making it an ideal choice for various power systems.
To manufacture the HEMTs in the TOLL package, ROHM has partnered with ATX Semiconductor, a Chinese outsourced semiconductor assembly and test (OSAT) provider. Plans are underway to collaborate with ATX to produce automotive-grade GaN devices, aiming to meet the growing demand for GaN devices in the automotive sector. ROHM’s first-generation 650 V GaN HEMTs were introduced in April 2023, followed by the release of power stage ICs that combine a gate driver and 650 V GaN HEMT in a single package.
These new products integrate GaN-on-Si chips in a TOLL package, resulting in enhanced device metrics related to ON-resistance and output charge (RDS(on) × Qoss). This integration contributes to further miniaturization and energy efficiency in power systems requiring high voltage resistance and high-speed switching capabilities. The automotive industry is increasingly adopting GaN devices, and ROHM is preparing to introduce automotive-grade GaN devices to meet this rising demand.
Satoshi Fujitani, General Manager at ROHM, highlighted the importance of collaborating with advanced technical partners like ATX to stay competitive in the growing GaN market. By leveraging ROHM’s expertise and strengths, as well as the capabilities of their partners, innovative GaN devices can be brought to market efficiently. ROHM is committed to enhancing the performance of GaN devices to support miniaturization and efficiency improvements across various applications.
The development and release of second-generation elements in the TOLL package, in addition to the DFN8080 package, aim to strengthen ROHM’s lineup of 650 V GaN HEMTs. As GaN devices gain traction in the automotive sector, ROHM is focused on expanding partnerships and advancing their development efforts to meet the anticipated acceleration in adoption by 2026. The company’s dedication to promoting miniaturization and efficiency through GaN devices underscores its commitment to driving innovation and technological advancement in power system applications.
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