Summary
– Power supply circuits are increasingly using wide-bandgap semiconductors like silicon carbide and gallium nitride
– Switching to wide-bandgap semiconductors offers better performance and is more cost-effective
– Substituting semiconductors affects component selection in the circuit design process
– Engineers need to consider factors like voltage rating, capacitance value, ESR, and ESL
– This white paper covers basic snubber derivation for a simple switching circuit, offering insight into snubber capacitor sizing and the impact of wide-bandgap semiconductors
Article
As power supply circuits increasingly use wide-bandgap semiconductors like silicon carbide (SiC) and gallium nitride (GaN) instead of traditional silicon insulated-gate bipolar transistors (IGBTs), there are noticeable performance benefits. With costs decreasing, these semiconductors are now more accessible than ever before. While the fundamental circuit design process remains the same, substituting such a crucial component necessitates a reevaluation of factors like voltage rating, capacitance value, equivalent series resistance (ESR), and equivalent series inductance (ESL) in the design process.
When switching to wide-bandgap semiconductors, engineers must consider the implications on component selection, particularly in areas like snubber circuits. Although the basic circuit design process remains consistent, the impact of these semiconductors on snubber capacitor sizing is significant. Snubber circuits, essential for minimizing voltage spikes and protecting semiconductors from damage, become more complex when incorporating wide-bandgap materials. Understanding how these switches influence snubber capacitor sizing is crucial for optimizing circuit performance and reliability.
In this white paper sponsored by Knowles Precision Devices, the basics of snubber derivation for a simple switching circuit are explored. While practical snubber circuits are more intricate, this exercise provides valuable insights into the impact of wide-bandgap semiconductors on snubber capacitor sizing. By grasping the fundamentals of snubber design for switching circuits, engineers can enhance their understanding of how these components contribute to overall circuit performance and efficiency.
By taking a fresh look at factors like voltage rating, capacitance value, ESR, and ESL in the design process, engineers can optimize circuit performance when incorporating wide-bandgap semiconductors. The shift towards SiC and GaN semiconductors offers clear advantages in terms of performance, efficiency, and cost-effectiveness. With the increasing accessibility of these materials, it is essential for engineers to adapt their component selection process and consider the implications on key circuit parameters.
Understanding the basic principles of snubber circuits and their role in protecting semiconductors from voltage spikes and damage is crucial for optimizing circuit performance. While the complexity of practical snubber circuits may vary, the exercise of deriving snubber capacitors for a simple switching circuit provides a foundation for grasping the impact of wide-bandgap semiconductors on snubber design. By delving into these concepts, engineers can improve their ability to select and integrate components effectively, enhancing the reliability and efficiency of power supply circuits using SiC and GaN semiconductors.
In conclusion, the adoption of wide-bandgap semiconductors like SiC and GaN in power supply circuits offers significant performance benefits. While the transition from traditional silicon IGBTs necessitates a reevaluation of component selection processes, the shift towards SiC and GaN presents opportunities for enhanced efficiency and cost-effectiveness. By understanding the impact of these semiconductors on factors like snubber circuit design, engineers can optimize circuit performance and reliability when incorporating wide-bandgap materials. This white paper provides valuable insights into the basics of snubber derivation for switching circuits and highlights the importance of considering key parameters in the design process to maximize the benefits of wide-bandgap semiconductors.
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